PART |
Description |
Maker |
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
CGH27030F |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
SKY73012 |
400 - 3900 MHz Direct Quadrature Demodulator
|
SKYWORKS[Skyworks Solutions Inc.]
|
MAAM-007866-0P1RA1 MAAM-007866-0P1R00 MAAM-007866- |
Broadband Driver Amplifier 50 to 3300 MHz
|
Tyco Electronics
|
CGHV27100 CGHV27100F CGHV27100-TB CGHV27100F-AMP |
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
|
Cree, Inc
|
LNW2W332MSEG LNW2W332MSEH LNW2H102MSEG LNW2H152MSE |
3.3 V PureEdge™ Crystal (25MHz) to Dual HCSL Clock Generator with selectable (25/100/125/200 MHz) output frequencies Analog Multiplexer/Demultiplexer Single Buffer Non-Inverting, TTL Level Single Inverter, Schmitt Input,TTL Level Zener Diode 500 mW 2.5 V 5% SOD-123 Analog Multiplexers/Demultiplexers with Injection Current Effect Control ALUMINUM ELECTROLYTIC CAPACITORS CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 3900 uF, CHASSIS MOUNT LOG CMOS BUS INTRFCE OCTL CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
|
Nichicon Corporation Nichicon, Corp.
|
DU2810 DU2810S |
RF MOSFET Power Transistor, lOW, 28V 2 - 175 MHz RF MOSFET Power Transistor/ lOW/ 28V 2 - 175 MHz
|
Tyco Electronics
|
|